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TI CSD16327Q3RoHS

Manufacturer
TI
MPN
CSD16327Q3
LCSC Part #
C2860421
Packaging
VSON-CLIP-8(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 25V 112A VSON-CLIP-8(3.3x3.3)
Datasheetpdf iconTI CSD16327Q3
In-Stock: 361
361 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.1422$ 1.14
10+$ 0.9667$ 9.67
30+$ 0.879$ 26.37
100+$ 0.7912$ 79.12
500+$ 0.7393$ 369.65
1,000+$ 0.7116$ 711.60
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingVSON-CLIP-8(3.3x3.3)
Drain to Source Voltage25V
Output Capacitance(Coss)960pF
Current - Continuous Drain(Id)112A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)6.5mΩ@3V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)8.4nC@4.5V
TypeN-Channel
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Introduction

AI Translation

This 25V, 3.4mΩ, SON 3.3mm × 3.3mm NexFET power MOSFET is designed to minimize power loss in power conversion applications and is optimized for 5V gate driver applications.

Features

AI Translation
  • Optimized for 5V gate drivers
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free lead finish
  • RoHS compliant
  • Halogen-free
  • Small outline no-lead (SON) 3.3mm × 3.3mm plastic package

Applications

AI Translation
  • Point-of-load synchronous buck converter for networking, telecommunications, and computing system applications
  • Optimized for control or synchronous FET applications