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EDA-ModelleEasyEDA
JSCJ SBDA30100T
| Hersteller | JSCJAsian Brands |
| Herst.-Teilenr. | SBDA30100T |
| LCSC-Nr. | C2829439 |
| Verp. | PDFNWB-8L(5x6) |
| Kundennummer | |
| Hauptmerkm. | 1 Independent 100V 820mV@30A 30A PDFNWB-8L(5x6) Single Diodes RoHS |
| Datenblatt | JSCJ SBDA30100T |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L(5x6) | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 820mV@30A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 300A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L(5x6) | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 820mV@30A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 300A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low power consumption, high efficiency
- Guard ring chip structure for transient protection
- High current capability and low forward voltage drop
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L(5x6) | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 820mV@30A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 300A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L(5x6) | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 820mV@30A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 300A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low power consumption, high efficiency
- Guard ring chip structure for transient protection
- High current capability and low forward voltage drop
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |