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onsemi NDS355NRoHS

Manufacturer
onsemi
MPN
NDS355N
LCSC Part #
C274606
Packaging
SOT-23-3
Customer #
Key Attributes
N-Channel MOSFET, Current:1.6A, Voltage:30V
Datasheetpdf icononsemi NDS355N
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.531$ 0.53
10+$ 0.4177$ 4.18
30+$ 0.3688$ 11.06
100+$ 0.3076$ 30.76
500+$ 0.28$ 140.00
1,000+$ 0.2632$ 263.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23-3
Drain to Source Voltage30V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)125mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)245pF
Gate Charge(Qg)5nC@5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are required in ultra-compact SMT packages.

Features

AI Translation
  • 1.6A, 30V. R DS(ON) = 0.125Ω at VGS = 4.5V.
  • Proprietary package with copper lead frame for superior thermal and electrical performance.
  • High-density cell design for ultra-low RDS(ON).
  • Excellent on-resistance and maximum DC current capability.
  • Compact industry-standard SOT-23 surface-mount package.

Applications

AI Translation
  • Notebook computers
  • Portable phones
  • PCMCIA cards
  • Other battery-powered circuits