ST STD6N52K3
| Manufacturer | |
| MPN | STD6N52K3 |
| LCSC Part # | C2688619 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 525V 5A 4.5V 70W 1.2Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 525V | |
| Output Capacitance(Coss) | 54pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MDmesh™ K3 power MOSFET is the result of improvements to MDmesh™ technology combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely high dv/dt capability
- Extremely low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9343 | $ 0.93 |
| 10+ | $ 0.91 | $ 9.10 |
| 30+ | $ 0.8953 | $ 26.86 |
| 100+ | $ 0.8791 | $ 87.91 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 525V | |
| Output Capacitance(Coss) | 54pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MDmesh™ K3 power MOSFET is the result of improvements to MDmesh™ technology combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely high dv/dt capability
- Extremely low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
AI Translation
- Switching applications
C2688619 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

