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TI LM5108DRCR product image
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TI LM5108DRCRRoHS

Manufacturer
TI
MPN
LM5108DRCR
LCSC Part #
C2676946
Packaging
VSON-10-EP(3x3)
Customer #
Key Attributes
100V half-bridge gate driver
Datasheetpdf iconTI LM5108DRCR
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8103$ 0.81
10+$ 0.6709$ 6.71
30+$ 0.6012$ 18.04
100+$ 0.5316$ 53.16
500+$ 0.4651$ 232.55
1,000+$ 0.4441$ 444.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingVSON-10-EP(3x3)
Input Logic Level - Low-
Low Level Delay Time20ns
High Level Delay Time20ns
Quiescent Current290uA
Input Logic Level - High-
Operating Temperature-40℃~+125℃
Voltage - Supply5.5V~16V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)2.6A
Rise Time11ns
Fall Time8ns
FeaturesUnder Voltage Protection;Enable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)1.6A
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The LM5108 is a high-frequency half-bridge gate driver with a maximum switching node (HS) voltage rating of 100V. This device enables control of two N-channel MOSFETs in half-bridge-based topologies such as synchronous buck, full-bridge, active clamp forward, LLC, and synchronous boost.

The device features an interlock function that prevents both outputs from being simultaneously high when both inputs are high. This interlock improves system robustness in motor drive and power tool applications. The enable and disable functions provide flexible, fast control of the power stage. Battery-powered tools can also leverage the LM5108's features to reduce standby current and respond to system faults. The inputs are independent of the supply voltage and can have independent pulse widths, enabling extremely high control flexibility. Both the input and enable functions include sufficient hysteresis to improve system robustness in noise-prone applications such as motor drivers.

The low-side and high-side outputs achieve propagation delay matching as low as 1ns between each other's turn-on and turn-off transitions, enabling optimized dead time for improved efficiency. The 5V UVLO allows the driver to operate from a lower bias supply, enabling the power stage to run at higher switching frequencies without increasing switching losses. The VDD and HB UVLO threshold specifications are designed so that the high-side and low-side drivers typically turn on at 5V. If the VDD and HB UVLO thresholds were identical, the designer would require a bias supply above the VDD UVLO threshold to turn on both the high-side and low-side drivers simultaneously.

The integrated bootstrap diode eliminates the need for an external discrete diode, improving PCB space utilization. The compact package supports space-constrained power designs such as power tools.

Features

AI Translation
  • Drives two N-channel MOSFETs in high-side/low-side configuration
  • 3mm×3mm package
  • Interlocking or shoot-through protection
  • Enable/disable function
  • Absolute maximum negative voltage handling on HS pin (-5V)
  • 5V typical UVLO
  • 20ns typical propagation delay
  • 11ns rise time and 8ns typical fall time with 1000pF load
  • 1ns typical delay matching
  • 2.6A sink, 1.6A source output
  • 110V absolute maximum bootstrap voltage
  • Low quiescent current in disable state (7μA)
  • Integrated bootstrap diode

Applications

AI Translation
  • Motor drivers and power tools
  • Switch-mode power supplies
  • Auxiliary inverters