TI LM5022QDGSRQ1

The LM5022-Q1 is a high-voltage, low-side N-channel MOSFET controller well suited for boost and SEPIC regulators. The device contains all the functions needed to implement single-ended primary-side topologies. Output regulation is based on current-mode control, which simplifies loop compensation design while providing inherent input voltage feedforward. The LM5022-Q1 incorporates a startup regulator that operates over a wide input voltage range of 6V to 60V. The PWM controller is designed for high-speed performance, with an oscillator frequency range up to 2.2MHz and total propagation delay of less than 100ns. Additional features include an error amplifier, precision reference, line undervoltage lockout, cycle-by-cycle current limiting, slope compensation, soft-start, external synchronization, and thermal shutdown. The LM5022-Q1 is available in a 10-pin VSSOP package.

• Qualified to AEC-Q100 Grade 1 with the following results:
• Device temperature grade 1: ambient operating temperature range of -40°C to 125°C
• Device HBM ESD classification level 2
• Device CDM ESD classification level C5
• Internal 60V startup regulator
• MOSFET gate driver with 1A peak current
• VIN range: 6V to 60V (after startup, minimum operating voltage down to 3V)
• 90% duty cycle limit
• Programmable UVLO with hysteresis
• Cycle-by-cycle current limiting
• Oscillator frequency set by single resistor
• External clock synchronization

• Boost converter
• SEPIC converter