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TI UCC27511AQDBVRQ1RoHS

Manufacturer
TI
MPN
UCC27511AQDBVRQ1
LCSC Part #
C2653788
Packaging
SOT-23-6
Customer #
Key Attributes
Single-channel high-speed, low-side gate driver with 4A peak sourcing current and 8A peak sinking current
Datasheetpdf iconTI UCC27511AQDBVRQ1
In-Stock: 120
120 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0003$ 1.00
10+$ 0.8201$ 8.20
30+$ 0.6723$ 20.17
100+$ 0.583$ 58.30
500+$ 0.5294$ 264.70
1,000+$ 0.5018$ 501.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingSOT-23-6
Input Logic Level - Low1V~1.2V
Low Level Delay Time13ns
High Level Delay Time19ns
Quiescent Current-
Input Logic Level - High2.2V~2.4V
Operating Temperature-40℃~+140℃
Voltage - Supply4.5V~18V
Driven ConfigurationLow Side
Current - Output Low(IOL)8A
Rise Time8ns
Fall Time7ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection
Current - Output High(IOH)4A
Load TypeMOSFET;IGBT
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The UCC27511A-Q1 is a compact gate driver that provides a high-quality alternative to discrete NPN and PNP driver (buffer circuit) solutions. The UCC27511A-Q1 is an automotive-grade, single-channel, low-side, high-speed gate driver for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The UCC27511A-Q1 features fast rise time, fast fall time, and fast propagation delay, making it well-suited for high-speed applications. This device employs asymmetric drive with 4A peak source current and 8A peak sink current, enhancing immunity to Miller turn-on effects. The split-output configuration enables independent adjustment of rise and fall times using only two resistors, eliminating the need for an external diode.

Features

AI Translation
  • Qualified for automotive applications with AEC-Q100 results: Device Temperature Grade 1: ambient operating temperature range –40°C to 125°C; Device HBM ESD Classification Level 2; Device CDM ESD Classification Level C4B
  • Low-cost gate driver offering a high-quality alternative to NPN and PNP discrete solutions
  • 4A peak source current and 8A peak sink current, asymmetric drive — strong sink current for enhanced Miller turn-on immunity
  • Split-output configuration in UCC27511A-Q1 (independent, simplified adjustment of turn-on and turn-off speeds)
  • Fast propagation delay (13ns typical)
  • Fast rise and fall times (9ns and 7ns typical)
  • 4.5V to 18V single-supply range
  • Output held low during VDD UVLO (glitch-free operation during power-up and power-down)
  • TTL and CMOS compatible input logic thresholds (independent of supply voltage)
  • Hysteretic logic thresholds for high noise immunity
  • Dual-input design (selectable inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
  • Unused input pin usable for enable/disable function
  • Output held low when input pins are floating
  • Input pin maximum absolute voltage level independent of VDD pin bias supply voltage
  • Input pins withstand –5V DC (below GND pin voltage)

Applications

AI Translation
  • Switched-mode power supplies
  • DC-to-DC converters
  • Companion gate driver devices for digital power controllers
  • Solar, motor control, uninterruptible power supply (UPS)
  • Gate drivers for emerging wide-bandgap power devices (e.g., GaN)