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Infineon IMLT65R060M2HXTMA1RoHS

Manufacturer
MPN
IMLT65R060M2HXTMA1
LCSC Part #
C26312791
Packaging
HDSOP-16
Customer #
Key Attributes
SICFET 650V HDSOP-16
Datasheetpdf iconInfineon IMLT65R060M2HXTMA1
In-Stock: 19
19 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 6.5329$ 6.53
10+$ 5.5592$ 55.59
30+$ 4.9675$ 149.03
100+$ 4.4701$ 447.01
Standard Packaging1800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingHDSOP-16
Drain to Source Voltage650V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)65pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)4.1pF
RDS(on)73mΩ
Number1 N-channel
Input Capacitance(Ciss)669pF
Gate Charge(Qg)18nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1800
Sales UnitPiece

Introduction

AI Translation

Built on Infineon's robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever-growing system and market needs.

Features

AI Translation
  • Ultra-low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • .XT interconnection technology for best-in-class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives