- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | - | |
| type | NPN | |
| Current - Collector(Ic) | 5A | |
| Vce Saturation(VCE(sat)) | 2V@3A,12mA | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
AI Translation
- Low collector-emitter saturation voltage
- Complementary NPN - PNP transistors
Applications
AI Translation
- General purpose linear and switching
In-Stock: 204
204 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6301 | $ 0.63 |
| 10+ | $ 0.5194 | $ 5.19 |
| 30+ | $ 0.4722 | $ 14.17 |
| 100+ | $ 0.4136 | $ 41.36 |
| 500+ | $ 0.3875 | $ 193.75 |
| 1,000+ | $ 0.3713 | $ 371.30 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | - | |
| type | NPN | |
| Current - Collector(Ic) | 5A | |
| Vce Saturation(VCE(sat)) | 2V@3A,12mA | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
AI Translation
- Low collector-emitter saturation voltage
- Complementary NPN - PNP transistors
Applications
AI Translation
- General purpose linear and switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |  |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |