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ST STP14NK60ZFP

Hersteller
ST
Herst.-Teilenr.
STP14NK60ZFP
LCSC-Nr.
C262953
Verp.
TO-220FPAB-3
Kundennummer
Hauptmerkm.
MOSFET N-CH 600V 13.5A TO-220FPAB-3
DatenblattST STP14NK60ZFP
RoHS-Konformität3 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerST
Verp.TO-220FPAB-3
Output Capacitance(Coss)240pF
Ciss-Input Capacitance2.22nF
Pd - Power Dissipation40W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)13.5A
Reverse Transfer Capacitance (Crss)57pF
RDS(on)500mΩ@10V
Number1 N-channel
Gate Charge(Qg)75nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4.5V
TypeN-Channel
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Beschreibung

KI-Übersetzung

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Merkmale

KI-Übersetzung
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Zener-protected

Anwendungen

KI-Übersetzung
  • Switching applications