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ST M24C16-RDW6TPRoHS

Manufacturer
MPN
M24C16-RDW6TP
LCSC Part #
C262922
Packaging
TSSOP-8
Customer #
Key Attributes
16-Kbit serial I2C bus EEPROM
Datasheetpdf iconST M24C16-RDW6TP
In-Stock: 1,125
1,125 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2176$ 1.09
50+$ 0.1703$ 8.52
150+$ 0.15$ 22.50
500+$ 0.1247$ 62.35
2,500+$ 0.1135$ 283.75
4,000+$ 0.1067$ 426.80
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerST
PackagingTSSOP-8
Memory Size16Kbit
Voltage - Supply1.8V~5.5V
Operating temperature-40℃~+85℃
Clock Frequency400kHz
FeaturesHardware write protection function;Built-in power-on reset (POR)
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance4,000,000 Cycles
InterfaceI2C

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The M24C16 is a 16-Kbit I²C -compatible EEPROM (electrically erasable programmable memory) organized as 2Kx8 bits. The M24C16-W can be accessed (Read and Write) with a supply voltage from 2.5 V to 5.5 V, the M24C16-R can be accessed (Read and Write) with a supply voltage from 1.8 V to 5.5 V, and the M24C16-F can be accessed with a supply voltage from 1.7 V to 5.5 V (over the full temperature range) or with an extended supply voltage from 1.6 V to 1.7 V. The M24C16-F can also operate down to 1.6 V under some restricting conditions. All these devices operate with a clock frequency of 400 kHz (or lower).

Features

AI Translation
  • Compatible with following I²C bus modes: 400 kHz, 100 kHz
  • Memory array: 16 Kbit (2 Kbyte) of EEPROM Page size: 16 byte
  • Single supply voltage: M24C16-W: 2.5 V to 5.5 V; M24C16-R: 1.8 V to 5.5 V; M24C16-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range)
  • Write time: Byte write within 5 ms, Page write within 5 ms
  • Operating temperature range: from -40 ℃ up to +85 ℃
  • Random and sequential read modes
  • Write protect of the whole memory array
  • Enhanced ESD/latch-up protection
  • More than 4 million Write cycles
  • More than 200-year data retention