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Infineon IRF520NPBFRoHS

Manufacturer
Infineon
MPN
IRF520NPBF
LCSC Part #
C2598
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 100V 9.7A TO-220AB
Datasheetpdf iconInfineon IRF520NPBF
In-Stock: 961
961 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6734$ 0.67
10+$ 0.5579$ 5.58
50+$ 0.4571$ 22.86
100+$ 0.3985$ 39.85
500+$ 0.3644$ 182.20
1,000+$ 0.3465$ 346.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage100V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)9.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free