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MagnaChip Semicon MDP1933THRoHS

Manufacturer
MPN
MDP1933TH
LCSC Part #
C25414988
Packaging
TO-220
Customer #
Key Attributes
157W 80V 120A 2V 5.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconMagnaChip Semicon MDP1933TH
In-Stock: 224
224 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4021$ 0.40
10+$ 0.3143$ 3.14
50+$ 0.2761$ 13.81
100+$ 0.2282$ 22.82
500+$ 0.2075$ 103.75
1,000+$ 0.1947$ 194.70
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMagnaChip Semicon
PackagingTO-220
Output Capacitance(Coss)651.7pF
Pd - Power Dissipation157W
ConfigurationStandalone
Drain to Source Voltage80V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)34.2pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.841nF
Gate Charge(Qg)59.4nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

MDP1933 utilizes advanced Magnachip MOSFET technology, featuring low on-resistance, fast switching performance, and superior quality. MDP1933 is suitable for server synchronous rectification and general-purpose applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 80 V
  • Drain Current (ID) = 105 A at Gate-Source Voltage (VGS) = 10 V
  • On-Resistance (RDS(ON)) < 7.0 mΩ at VGS = 10 V
  • 100% Single-Pulse Avalanche Energy (UIS) Tested
  • 100% Gate Resistance (Rg) Tested
  • TO-220 Package

Applications

AI Translation
  • Server synchronous rectification
  • General-purpose applications