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Infineon ISG0614N06NM5HATMA1 product image
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Infineon ISG0614N06NM5HATMA1RoHS

Manufacturer
Infineon
MPN
ISG0614N06NM5HATMA1
LCSC Part #
C25397922
Packaging
PGVITFN-10
Customer #
Key Attributes
MOSFET N-CH 60V 233A PGVITFN-10
Datasheetpdf iconInfineon ISG0614N06NM5HATMA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingPGVITFN-10
Current - Continuous Drain(Id)233A
RDS(on)1.6mΩ@10V
Pd - Power Dissipation167W
Gate Threshold Voltage (Vgs(th))3.3V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)81pF
Number1 N-channel
Input Capacitance(Ciss)6.4nF
Gate Charge(Qg)102nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.44nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Symmetrical Half Bridge
  • Optimized for low voltage drives and battery powered applications
  • Optimized for high performance SMPS
  • N-channel
  • Very low on-resistance RDS(on)
  • Superior thermal resistance
  • 100% avalanche tested
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

AI Translation
  • Audio Amplifier - Startup Circuit - Protection Circuit - Ramp Generator - Current Regulator - Active Load
In-Stock: 1
1 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 6.8521$ 6.85
10+$ 5.8566$ 58.57
30+$ 5.2504$ 157.51
100+$ 4.7431$ 474.31
Standard Packaging3000/Full Reel
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