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EDA ModelsEasyEDA
onsemi FQP11N40C
| Manufacturer | |
| MPN | FQP11N40C |
| LCSC Part # | C243074 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 400V 10.5A TO-220 |
| Datasheet |  onsemi FQP11N40C |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 325pF | |
| Current - Continuous Drain(Id) | 10.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 135W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 530mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 325pF | |
| Current - Continuous Drain(Id) | 10.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 135W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 530mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
- 10.5 A, 400 V, RDS(on)=530 mΩ (Max.) @ VGS=10 V, ID=5.25 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 85 pF)
- 100% Avalanche Tested
- This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 10.5 A, 400 V, RDS(on)=530 mΩ (Max.) @ VGS=10 V, ID=5.25 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 85 pF)
- 100% Avalanche Tested
Applications
AI Translation
- switched mode power supplies
- active power factor correction (PFC)
- electronic lamp ballasts
In-Stock: 2
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5025 | $ 3.50 |
| 10+ | $ 3.0214 | $ 30.21 |
| 30+ | $ 2.7352 | $ 82.06 |
| 100+ | $ 2.4459 | $ 244.59 |
| 500+ | $ 2.3128 | $ 1156.40 |
| 1,000+ | $ 2.2525 | $ 2252.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 325pF | |
| Current - Continuous Drain(Id) | 10.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 135W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 530mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 325pF | |
| Current - Continuous Drain(Id) | 10.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 135W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 530mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
- 10.5 A, 400 V, RDS(on)=530 mΩ (Max.) @ VGS=10 V, ID=5.25 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 85 pF)
- 100% Avalanche Tested
- This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 10.5 A, 400 V, RDS(on)=530 mΩ (Max.) @ VGS=10 V, ID=5.25 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 85 pF)
- 100% Avalanche Tested
Applications
AI Translation
- switched mode power supplies
- active power factor correction (PFC)
- electronic lamp ballasts
C243074 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMP13N45 | Cmos | TO-220 | 154 | $0.3707 $0.3902 | ||
| CMP12N40 | Cmos | TO-220 | 1 | $0.3866 $0.4069 | ||
| WGP11N40 | Wild Goose | TO-220 | 978 | $ 0.2626 | ||
| IRF740PBF | VISHAY | TO-220AB | 308 | $ 0.7449 | ||
| IRF740LCPBF | VISHAY | TO-220AB | 5 | $ 2.8009 | ||
| NTP165N65S3H | onsemi | TO-220-3LD | 186 | $1.0316 $2.8654 | ||
| VBM18R11S | VBsemi Elec | TO-220AB | 0 | $ 4.0027 | ||
| IRF740LCPBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.9843 | ||
| SPP11N65C3XK | Infineon | TO-220-3 | 0 | $ 1.5029 | ||
| VBM17R12 | VBsemi Elec | TO-220AB | 0 | $ 1.6721 |