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onsemi FDPF3860T

Produttore
onsemi
Cod. Prod.
FDPF3860T
Cod. LCSC
C243063
Imballo
TO-220F
Numero Cliente
Attr. chiave
MOSFET N-CH 100V 20A TO-220F
Scheda Tecnicaonsemi FDPF3860T
Conformità RoHS4 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-220F
Output Capacitance(Coss)190pF
Ciss-Input Capacitance1.8nF
Pd - Power Dissipation33.8W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)20A
Reverse Transfer Capacitance (Crss)90pF
RDS(on)38.2mΩ@10V
Number1 N-channel
Gate Charge(Qg)35nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4.5V
TypeN-Channel
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Descrizione

Traduzione AI

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Caratteristiche

Traduzione AI
  • RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant

Applicazioni

Traduzione AI
  • Consumer Appliances
  • LCD/LED/PDP TV
  • Synchronous Rectification
  • Uninterruptible Power Supply
  • Micro Solar Inverter