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onsemi FDC638APZRoHS

Manufacturer
MPN
FDC638APZ
LCSC Part #
C241771
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 20V 4.5A SuperSOT-6
Datasheetpdf icononsemi FDC638APZ
In-Stock: 244
244 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4484$ 0.2018$ 0.20
10+$ 0.3574$ 0.1609$ 1.61
30+$ 0.3175$ 0.1429$ 4.29
100+$ 0.2697$ 0.1214$ 12.14
500+$ 0.2473$ 0.1113$ 55.65
1,000+$ 0.2346$ 0.1056$ 105.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage20V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
RDS(on)43mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)195pF
Number1 P-Channel
Input Capacitance(Ciss)1nF
Gate Charge(Qg)12nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 2.5V specific P-channel MOSFET is manufactured using the advanced PowerTrench® process, which is specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance. These devices are ideal for battery-powered applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

Features

AI Translation
  • Maximum rDS(on) = 43 mΩ at VGS = -4.5 V, ID = -4.5 A
  • Maximum rDS(on) = 68 mΩ at VGS = -2.5 V, ID = -3.8 A
  • Low gate charge (typical 8nC)
  • High-performance trench technology for ultra-low rDS(on)
  • SuperSOT-6 package: small footprint (72% smaller than standard SO-8), low profile (1mm)
  • RoHS compliant

Applications

AI Translation
  • DC-DC conversion