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onsemi MBR0530T3G
| Manufacturer | |
| MPN | MBR0530T3G |
| LCSC Part # | C236079 |
| Packaging | SOD-123 |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 30V SOD-123 |
| Datasheet |  onsemi MBR0530T3G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 430mV@500mA | |
| Reverse Leakage Current (Ir) | 130uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 5.5A | |
| Current - Rectified | 500mA |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MBR0530 uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as-free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy-to-work with alternative to leadless 34 package style.
Features
- Guardring for Stress Protection
- Low Forward Voltage
- 125℃ Operating Junction Temperature
- Epoxy Meets UL 94, V-0 @ 0.125 in
- Package Designed for Optimal Automated Board Assembly
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0741 | $ 0.74 |
| 100+ | $ 0.0616 | $ 6.16 |
| 300+ | $ 0.0554 | $ 16.62 |
| 1,000+ | $ 0.0507 | $ 50.70 |
| 5,000+ | $ 0.047 | $ 235.00 |
| 10,000+ | $ 0.0451 | $ 451.00 |
Standard Packaging10000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 430mV@500mA | |
| Reverse Leakage Current (Ir) | 130uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 5.5A | |
| Current - Rectified | 500mA |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MBR0530 uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as-free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy-to-work with alternative to leadless 34 package style.
Features
- Guardring for Stress Protection
- Low Forward Voltage
- 125℃ Operating Junction Temperature
- Epoxy Meets UL 94, V-0 @ 0.125 in
- Package Designed for Optimal Automated Board Assembly
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
C236079 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |