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onsemi TIP110GRoHS

Manufacturer
onsemi
MPN
TIP110G
LCSC Part #
C233760
Packaging
TO-220
Customer #
Key Attributes
60V 1000 2A NPN TO-220 Single Bipolar Transistors RoHS
Datasheetpdf icononsemi TIP110G
In-Stock: 190
190 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.264$ 1.26
10+$ 1.0853$ 10.85
30+$ 0.9959$ 29.88
100+$ 0.9082$ 90.82
500+$ 0.8546$ 427.30
1,000+$ 0.827$ 827.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-220
Current - Collector Cutoff1mA
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation2W
Current - Collector(Ic)2A
typeNPN
Vce Saturation(VCE(sat))2.5V
Operating Temperature-65℃~+150℃@(Tj)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Designed for general-purpose amplifier and low-speed switching applications.

Features

AI Translation
  • High DC Current Gain
  • Collector-Emitter Sustaining Voltage:
    • VCEO(sus) = 60 Vdc (min) - TIP110, TIP115
    • VCEO(sus) = 80 Vdc (min) - TIP111, TIP116
    • VCEO(sus) = 100 Vdc (min) - TIP112, TIP117
  • Low Collector-Emitter Saturation Voltage
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Available in Lead-Free Package