Infineon 2ED3146MC12LXUMA1

The EiceDRIVER™ 2ED314xMC12L is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs, IGBTs, and SiC MOSFETs. All products are available in a 14-pin DSO package with 8 mm input-to-output creepage and provide reinforced isolation. All variants offer dead-time control (DTC) functionality and independent channel operation. This enables the operation as dual-channel low-side driver, dual-channel high-side driver or half-bridge gate driver with a configurable dead-time. With excellent common-mode transient immunity (CMTI), low part-to-part propagation delay mismatch, and fast signal propagation, these products are best suited for fast-switching applications.

• Dual-channel isolated gate driver
• To be used with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si, and SiC MOSFETs
• Up to 6.5 A typical peak output current
• 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew)
• 35 V absolute maximum output supply voltage
• High common-mode transient immunity, CMTI > 200 kV/μs
• Active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
• Safety certification - UL 1577 (File 311313) with V₁₅₀,test = 6840 V (rms) for 1 s, V₁₅₀ = 5700 V (rms) for 60 s - Reinforced insulation according to IEC 60747-17 (planned) with V₀RM = 1767 V (peak)

• EV charging
• Energy storage systems
• Solar inverters
• Server and telecom switched-mode power supplies (SMPS)
• UPS systems
• AC and brushless DC motor drives
• Commercial air conditioners (CAC)
• High voltage DC-DC converters and DC-AC inverters