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Zdjęcia poglądowe
Modele EDAEasyEDA
Siliup SP010N15GP8
| Producent | SiliupAsian Brands |
| Nr części prod. | SP010N15GP8 |
| Nr LCSC | C22466805 |
| Opak. | SOP-8L |
| Numer Klienta | |
| Klucz. cechy | MOSFET 100V 8A SOP-8L |
| Karta Katalogowa | Siliup SP010N15GP8 |
| Części alternatywne | 1 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Siliup | |
| Opak. | SOP-8L | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.069nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Siliup | |
| Opak. | SOP-8L | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.069nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Fast switching
- Low gate charge and on-resistance
- Advanced split-gate trench technology
- 100% single-pulse avalanche energy tested
Zastosowania
Tłumaczenie AI
- Power switching applications
- Battery management
- Uninterruptible power supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Siliup | |
| Opak. | SOP-8L | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.069nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Siliup | |
| Opak. | SOP-8L | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.069nF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Fast switching
- Low gate charge and on-resistance
- Advanced split-gate trench technology
- 100% single-pulse avalanche energy tested
Zastosowania
Tłumaczenie AI
- Power switching applications
- Battery management
- Uninterruptible power supply
C22466805 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |