Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | R+O | |
| Opak. | SOD-123FL | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@3A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | R+O | |
| Opak. | SOD-123FL | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@3A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Thin profile package
- Suitable for automated placement
- Guard ring for overvoltage protection
- Low power consumption, high efficiency
- MSL Level 1 compliant per J-STD-020, 260°C peak reflow temperature
Zastosowania
Tłumaczenie AI
- High-speed switching applications
- Circuit protection
- Voltage clamping
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | R+O | |
| Opak. | SOD-123FL | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@3A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | R+O | |
| Opak. | SOD-123FL | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 700mV@3A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Thin profile package
- Suitable for automated placement
- Guard ring for overvoltage protection
- Low power consumption, high efficiency
- MSL Level 1 compliant per J-STD-020, 260°C peak reflow temperature
Zastosowania
Tłumaczenie AI
- High-speed switching applications
- Circuit protection
- Voltage clamping
C22466353 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



