Tokmas CID10N65F

Manufacturer	TokmasAsian Brands
MPN	CID10N65F
LCSC Part #	C22446732
Packaging	TO-220F-3L
Customer #
Key Attributes	GaN Enhancement-mode Power Transistor
Datasheet	Tokmas CID10N65F

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	TO-220F-3L
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-50℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
RDS(on)	160mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel

In-Stock: 265

265 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.1299$ 1.0735	$ 1.07
10+	$ 0.9271$ 0.8808	$ 8.81
50+	$ 0.8161$ 0.7753	$ 38.77
100+	$ 0.6905$ 0.6560	$ 65.60
500+	$ 0.6342$ 0.6025	$ 301.25
1,000+	$ 0.6085$ 0.5781	$ 578.10
Standard Packaging50/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	TO-220F-3L
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-50℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
RDS(on)	160mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel