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HXY MOSFET HUCLAMP0511T.TCT
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HUCLAMP0511T.TCT |
| LCSC Part # | C22440125 |
| Packaging | DFN1006-2L |
| Customer # | |
| Key Attributes | ESD DIODE 5VWM 10VC DFN1006-2L |
| Datasheet | HXY MOSFET HUCLAMP0511T.TCT |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 2.5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 30W@8/20us | |
| Voltage - Breakdown | 8.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 2.5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 30W@8/20us |
| Type | Description | |
|---|---|---|
| Voltage - Breakdown | 8.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
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Introduction
AI Translation
HUCLAMP0511T.TCT protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best-in-class protection for ESD-sensitive designs. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
Features
AI Translation
- Ultra-low capacitance 2.5 pF
- Low clamp voltage
- Small footprint: 0.039" × 0.024" (1.00 mm × 0.60 mm)
- Low body height: 0.020" (0.5 mm)
- Standoff voltage: 5 V
- Low leakage
- Response time typically < 1.0 ns
- IEC61000-4-2 Level 4 ESD protection
- Lead-free device
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In-Stock: 40
40 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0407$ 0.0367 | $ 0.73 |
| 200+ | $ 0.0323$ 0.0291 | $ 5.82 |
| 600+ | $ 0.0276$ 0.0249 | $ 14.94 |
| 2,000+ | $ 0.0248$ 0.0224 | $ 44.80 |
| 10,000+ | $ 0.0224$ 0.0202 | $ 202.00 |
| 20,000+ | $ 0.0211$ 0.0190 | $ 380.00 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 2.5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 30W@8/20us | |
| Voltage - Breakdown | 8.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 2.5A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 30W@8/20us |
| Type | Description | |
|---|---|---|
| Voltage - Breakdown | 8.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HUCLAMP0511T.TCT protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best-in-class protection for ESD-sensitive designs. It offers designers the flexibility to protect a single bidirectional line in applications where arrays are not suitable.
Features
AI Translation
- Ultra-low capacitance 2.5 pF
- Low clamp voltage
- Small footprint: 0.039" × 0.024" (1.00 mm × 0.60 mm)
- Low body height: 0.020" (0.5 mm)
- Standoff voltage: 5 V
- Low leakage
- Response time typically < 1.0 ns
- IEC61000-4-2 Level 4 ESD protection
- Lead-free device
C22440125 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |