VBsemi Elec BSC027N10NS5ATMA1-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | BSC027N10NS5ATMA1-VB |
| LCSC Part # | C22395984 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 135A DFN5x6-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.6nF | |
| Gate Charge(Qg) | 84nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.6nF | |
| Gate Charge(Qg) | 84nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- 175 °C Junction Temperature SGT technology Power MOSFET
In-Stock: 1
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0037$ 1.7032 | $ 1.70 |
| 10+ | $ 1.6814$ 1.4292 | $ 14.29 |
| 30+ | $ 1.4782$ 1.2565 | $ 37.70 |
| 100+ | $ 1.2718$ 1.0811 | $ 108.11 |
| 500+ | $ 1.1781$ 1.0014 | $ 500.70 |
| 1,000+ | $ 1.1368$ 0.9663 | $ 966.30 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.6nF | |
| Gate Charge(Qg) | 84nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 135A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.6nF | |
| Gate Charge(Qg) | 84nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 175 °C Junction Temperature SGT technology Power MOSFET
C22395984 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



