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VBsemi Elec BSC030N08NS5ATMA1-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | BSC030N08NS5ATMA1-VB |
| LCSC Part # | C22395982 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 85V 140A DFN5x6-8 |
| Datasheet |  VBsemi Elec BSC030N08NS5ATMA1-VB |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 85V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 140A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 8.3W | |
| RDS(on) | 4mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.6nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 175 °C Junction Temperature
- SGT technology Power MOSFET
In-Stock: 326
326 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5281$ 1.4517 | $ 1.45 |
| 10+ | $ 1.2697$ 1.2063 | $ 12.06 |
| 30+ | $ 1.1282$ 1.0718 | $ 32.15 |
| 100+ | $ 0.9673$ 0.9190 | $ 91.90 |
| 500+ | $ 0.86$ 0.8170 | $ 408.50 |
| 1,000+ | $ 0.8291$ 0.7877 | $ 787.70 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 85V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 140A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 8.3W | |
| RDS(on) | 4mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.6nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 175 °C Junction Temperature
- SGT technology Power MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |