VBsemi Elec SSM3K324R-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | SSM3K324R-VB |
| Nr LCSC | C22389514 |
| Opak. | SOT-23(TO-236) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 6.5A SOT-23(TO-236) |
| Karta Katalogowa | VBsemi Elec SSM3K324R-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 335pF | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 33mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 335pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 33mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET Power MOSFET
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
- RoHS COMPLIANT HALOGEN FREE
Zastosowania
Tłumaczenie AI
- DC/DC Converter
- N-Channel MOSFET
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 335pF | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 33mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 335pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 33mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET Power MOSFET
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
- RoHS COMPLIANT HALOGEN FREE
Zastosowania
Tłumaczenie AI
- DC/DC Converter
- N-Channel MOSFET
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



