HXY MOSFET DMG2307L-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	82pF
Current - Continuous Drain(Id)	4.1A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	1.32W
Reverse Transfer Capacitance (Crss@Vds)	68pF
RDS(on)	48mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	463pF
Gate Charge(Qg)	5.22nC@4.5V
Type	P-Channel

In-Stock: 40

40 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
10+	$ 0.0713	$ 0.71
100+	$ 0.0564	$ 5.64
300+	$ 0.0489	$ 14.67
3,000+	$ 0.0433	$ 129.90
6,000+	$ 0.0388	$ 232.80
9,000+	$ 0.0366	$ 329.40
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	82pF
Current - Continuous Drain(Id)	4.1A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	1.32W
Reverse Transfer Capacitance (Crss@Vds)	68pF
RDS(on)	48mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	463pF
Gate Charge(Qg)	5.22nC@4.5V
Type	P-Channel