HXY MOSFET FDD8424H-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-4L
Configuration	Common Drain
Drain to Source Voltage	40V
Output Capacitance(Coss)	215pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	40W
Reverse Transfer Capacitance (Crss@Vds)	135pF
RDS(on)	18mΩ@10V
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	1.5nF
Gate Charge(Qg)	24nC@10v
Type	N-Channel + P-Channel

In-Stock: 2,473

2,473 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 0.5331$ 0.4265	$ 0.43
10+	$ 0.4284$ 0.3428	$ 3.43
30+	$ 0.3761$ 0.3009	$ 9.03
100+	$ 0.3253$ 0.2603	$ 26.03
500+	$ 0.2936$ 0.2349	$ 117.45
1,000+	$ 0.2777$ 0.2222	$ 222.20
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-4L
Configuration	Common Drain
Drain to Source Voltage	40V
Output Capacitance(Coss)	215pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	40W
Reverse Transfer Capacitance (Crss@Vds)	135pF
RDS(on)	18mΩ@10V
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	1.5nF
Gate Charge(Qg)	24nC@10v
Type	N-Channel + P-Channel