HXY MOSFET FDN86501LZ-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23-3L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	148pF
Current - Continuous Drain(Id)	4.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	8W
Reverse Transfer Capacitance (Crss@Vds)	7pF
RDS(on)	73mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	695pF
Gate Charge(Qg)	5.5nC@10V
Type	N-Channel

In-Stock: 39

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Qty	Unit Price	Total Amount
1+	$ 0.5474$ 0.3559	$ 0.36
10+	$ 0.4411$ 0.2868	$ 2.87
30+	$ 0.3888$ 0.2528	$ 7.58
100+	$ 0.3348$ 0.2177	$ 21.77
500+	$ 0.3031$ 0.1971	$ 98.55
1,000+	$ 0.2872$ 0.1867	$ 186.70
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23-3L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	148pF
Current - Continuous Drain(Id)	4.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	8W
Reverse Transfer Capacitance (Crss@Vds)	7pF
RDS(on)	73mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	695pF
Gate Charge(Qg)	5.5nC@10V
Type	N-Channel