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ElecSuper FDN338P product image
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ElecSuper FDN338PRoHS

Manufacturer
ElecSuperAsian Brands
MPN
FDN338P
LCSC Part #
C22363749
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2A SOT-23
Datasheetpdf iconElecSuper FDN338P
In-Stock: 2,150
2,150 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0234$ 1.17
500+$ 0.0179$ 8.95
3,000+$ 0.0147$ 44.10
6,000+$ 0.0129$ 77.40
24,000+$ 0.0113$ 271.20
51,000+$ 0.0104$ 530.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)82mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)185pF
Gate Charge(Qg)2.2nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDN338P is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FDN338P is lead-free.

Features

AI Translation
  • -20V, RDS(ON) = 82 mΩ (typical), VGS = -4.5 V
  • RDS(ON) = 118 mΩ (typical), VGS = -2.5 V
  • RDS(ON) = 180 mΩ (typical), VGS = -1.8 V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion