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ST M24C64-FDW6TPRoHS

Manufacturer
ST
MPN
M24C64-FDW6TP
LCSC Part #
C222148
Packaging
TSSOP-8
Customer #
Key Attributes
64-Kbit serial I²C bus EEPROMs
Datasheetpdf iconST M24C64-FDW6TP
In-Stock: 1,080
1,080 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2284$ 1.14
50+$ 0.1794$ 8.97
150+$ 0.1584$ 23.76
500+$ 0.1322$ 66.10
2,500+$ 0.1205$ 301.25
4,000+$ 0.1135$ 454.00
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerST
PackagingTSSOP-8
Memory Size64Kbit
Voltage - Supply1.7V~5.5V
Operating temperature-40℃~+85℃
Clock Frequency1MHz
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance4,000,000 Cycles
InterfaceI2C
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The M24C64 is a 64-Kbit |²C -compatible EEPROM (electrically erasable programmable memory) organized as 8Kx8 bits. Over an ambient temperature range of -40℃/+85℃, the M24C64-W can operate with a supply voltage from 2.5 V to 5.5V, the M24C64-R can operate with a supply voltage from 1.8 V to 5.5V, and the M24C64-F and M24C64-DF can operate with a supply voltage from 1.7 V to 5.5 V (the M24C64-F can also operate down to 1.6 V, under some restricting conditions). The M24C64-D offers an additional page, named the identification page (32 byte). The identification page can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode.

Features

AI Translation
  • Compatible with following |²C bus modes: 1 MHz, 400 kHz, 100 kHz
  • Memory array: 64 Kbit (8 Kbyte) of EEPROM
  • Page size: 32 byte
  • Additional Write lockable page (M24C64-D order codes)
  • Single supply voltage: 1.7 V to 5.5 V over -40℃/+85℃, 1.6 V to 5.5 V over 0℃/+85℃
  • Write: Byte write within 5 ms, Page write within 5 ms
  • Random and sequential read modes
  • Write protect of the whole memory array
  • Enhanced ESD/latch-Up protection
  • More than 4 million write cycles
  • More than 200-years data retention