- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
ST STFW3N170
| Manufacturer | |
| MPN | STFW3N170 |
| LCSC Part # | C222077 |
| Packaging | TO-3PF-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 1.7kV 2.6A TO-3PF-3 |
| Datasheet | ST STFW3N170 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-3PF-3 | |
| Output Capacitance(Coss) | 50pF | |
| Pd - Power Dissipation | 63W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1.7kV | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 13Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-3PF-3 | |
| Output Capacitance(Coss) | 50pF | |
| Pd - Power Dissipation | 63W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1.7kV | |
| Current - Continuous Drain(Id) | 2.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 13Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
AI Translation
- Intrinsic capacitances and Q₉ minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.2049 | $ 3.20 |
| 10+ | $ 2.8345 | $ 28.35 |
| 30+ | $ 2.6027 | $ 78.08 |
| 100+ | $ 2.3661 | $ 236.61 |
| 500+ | $ 2.2584 | $ 1129.20 |
| 1,000+ | $ 2.2127 | $ 2212.70 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-3PF-3 | |
| Output Capacitance(Coss) | 50pF | |
| Pd - Power Dissipation | 63W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1.7kV | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 13Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-3PF-3 | |
| Output Capacitance(Coss) | 50pF | |
| Pd - Power Dissipation | 63W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1.7kV | |
| Current - Continuous Drain(Id) | 2.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 13Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
AI Translation
- Intrinsic capacitances and Q₉ minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C222077 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MS5N170HGB2 | MASPOWER | TO-3PF | 41 | $ 3.1597 | ||
| SCT2H12NZGC11 | ROHM | TO-3PF-3 | 95 | $ 3.3174 | ||
| RS3N150PF | REASUNOS | TO-3PF | 16 | $0.9797 $1.0312 | ||
| WPH4003-1E | onsemi | TO-3PF-3 | 0 | $ 4.6546 |