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ElecSuper IRLML6344TRPBF-ES product image
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ElecSuper IRLML6344TRPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLML6344TRPBF-ES
LCSC Part #
C21713845
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 4.3A SOT-23
Datasheetpdf iconElecSuper IRLML6344TRPBF-ES
In-Stock: 1,940
1,940 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0236$ 0.47
200+$ 0.0183$ 3.66
600+$ 0.0154$ 9.24
3,000+$ 0.0137$ 41.10
9,000+$ 0.0121$ 108.90
21,000+$ 0.0113$ 237.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)4.3A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)34mΩ@10V;50mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)170pF
Gate Charge(Qg)4.1nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRLML6344TRPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML6344TRPBF-ES is lead-free.

Features

AI Translation
  • 30 V, RDS(ON) = 34 mΩ (typical), VGS = 10 V
  • RDS(ON) = 50 mΩ (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion