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ElecSuper IRLML2502TRPBF-ES product image
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ElecSuper IRLML2502TRPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLML2502TRPBF-ES
LCSC Part #
C21713837
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 3.3A SOT-23
Datasheetpdf iconElecSuper IRLML2502TRPBF-ES
In-Stock: 2,360
2,360 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0285$ 0.57
200+$ 0.0223$ 4.46
600+$ 0.0189$ 11.34
3,000+$ 0.0162$ 48.60
9,000+$ 0.0144$ 129.60
21,000+$ 0.0135$ 283.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)3.3A
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)45mΩ@4.5V;62mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)200pF
Gate Charge(Qg)3nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRLML2502TRPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML2502TRPBF-ES is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 45 mΩ (typical), VGS = 4.5 V
  • RDS(ON) = 62 mΩ (typical), VGS = 2.5 V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • ESD protection
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion