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ElecSuper BSS138P,215-ES product image
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ElecSuper BSS138P,215-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138P,215-ES
LCSC Part #
C21713830
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-23
Datasheetpdf iconElecSuper BSS138P,215-ES
In-Stock: 12,000
12,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0199$ 1.00
500+$ 0.0155$ 7.75
3,000+$ 0.013$ 39.00
6,000+$ 0.0116$ 69.60
24,000+$ 0.0103$ 247.20
51,000+$ 0.0096$ 489.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)3.3pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)1.8Ω@10V;2Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-channel
Input Capacitance(Ciss)15pF
Gate Charge(Qg)1.6nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138P,215-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138P,215-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.8 Ω (typical) @VGS=10V
  • RDS(ON) = 2.0 Ω (typical) @VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current
  • ESD protection - HBM: 2kV

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion