Tokmas IPB025N10N3G(TOKMAS)
| Manufacturer | TokmasAsian Brands |
| MPN | IPB025N10N3G(TOKMAS) |
| LCSC Part # | C21547647 |
| Packaging | TO-263-7L |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 280A TO-263-7L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.13nF | |
| Current - Continuous Drain(Id) | 280A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 286W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.2nF | |
| Gate Charge(Qg) | 131nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.13nF | |
| Current - Continuous Drain(Id) | 280A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 286W |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.2nF | |
| Gate Charge(Qg) | 131nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Surface-mounted package MSL1
- Advanced trench cell design
Applications
AI Translation
- BMS
- Drones
- High power inverter system
- Light electric vehicles
In-Stock: 423
423 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7514 | $ 1.75 |
| 10+ | $ 1.4922 | $ 14.92 |
| 30+ | $ 1.3302 | $ 39.91 |
| 100+ | $ 1.139 | $ 113.90 |
| 500+ | $ 1.0645 | $ 532.25 |
| 1,000+ | $ 1.0321 | $ 1032.10 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.13nF | |
| Current - Continuous Drain(Id) | 280A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 286W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.2nF | |
| Gate Charge(Qg) | 131nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-263-7L | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.13nF | |
| Current - Continuous Drain(Id) | 280A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 286W |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.2nF | |
| Gate Charge(Qg) | 131nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Surface-mounted package MSL1
- Advanced trench cell design
Applications
AI Translation
- BMS
- Drones
- High power inverter system
- Light electric vehicles
C21547647 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



