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VBsemi Elec IPD60R600C6-VB product image
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VBsemi Elec IPD60R600C6-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IPD60R600C6-VB
LCSC Part #
C20755518
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 9A TO-252
Datasheetpdf iconVBsemi Elec IPD60R600C6-VB
In-Stock: 50
50 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0368$ 0.8813$ 0.88
10+$ 0.8431$ 0.7167$ 7.17
30+$ 0.7463$ 0.6344$ 19.03
100+$ 0.6494$ 0.5520$ 55.20
500+$ 0.5923$ 0.5035$ 251.75
1,000+$ 0.5621$ 0.4778$ 477.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage650V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF
Gate Charge(Qg)25nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Low figure-of-merit (FOM) Ron×Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

Applications

AI Translation
  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
  • Industrial