VBsemi Elec STP24NM60N-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | STP24NM60N-VB |
| Nr LCSC | C20626267 |
| Opak. | TO-220AB |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 650V 20A TO-220AB |
| Karta Katalogowa | VBsemi Elec STP24NM60N-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron×Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Telecommunications - Server and telecom power supplies
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Consumer and computing - ATX power supplies
- Industrial - Welding - Battery chargers
- Renewable energy - Solar (PV inverters)
- Switch mode power supplies (SMPS)
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 8
8 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.7563$ 2.3429 | $ 2.34 |
| 10+ | $ 2.3514$ 1.9987 | $ 19.99 |
| 50+ | $ 2.0974$ 1.7828 | $ 89.14 |
| 100+ | $ 1.837$ 1.5615 | $ 156.15 |
| 500+ | $ 1.7195$ 1.4616 | $ 730.80 |
| 1,000+ | $ 1.6687$ 1.4184 | $ 1418.40 |
Standardowa Obudowa50/Full Tube | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 106nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron×Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Telecommunications - Server and telecom power supplies
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Consumer and computing - ATX power supplies
- Industrial - Welding - Battery chargers
- Renewable energy - Solar (PV inverters)
- Switch mode power supplies (SMPS)
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| FQP20N60C-VB | VBsemi Elec | Podobne | TO-220AB | 50 | $ 2.8776 | ||
| 6R190C6 TO220-VB | VBsemi Elec | Podobne | TO-220 | 2 | $2.4952 $2.9355 | ||
| STP24N60DM2-VB | VBsemi Elec | Podobne | TO-220AB | 2 | $2.2417 $2.6372 | ||
| LSC20N65F-VB | VBsemi Elec | Podobne | TO-220AB | 3 | $2.2417 $2.6372 | ||
| IRFB18N50KPBF-VB | VBsemi Elec | Podobne | TO-220AB | 1 | $ 2.8581 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki



