KIA Semicon Tech KNH3530A
| Manufacturer | KIA Semicon TechAsian Brands |
| MPN | KNH3530A |
| LCSC Part # | C20623379 |
| Packaging | TO-3P |
| Customer # | |
| Key Attributes | 300V 70A 520W 52mΩ@10V TO-3P Single FETs, MOSFETs |
| Datasheet | KIA Semicon Tech KNH3530A |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-3P | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 70A | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 52mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-3P | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 52mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Proprietary novel planar technology
- R DS(ON) = 45 mΩ (typical) at V GS = 10 V
- Low gate charge for minimized switching losses
- Robust polysilicon gate structure
Applications
AI Translation
- Brushless DC motor driver
- Arc welding machine
- High-efficiency switch-mode power supply
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.2498 | $ 3.25 |
| 210+ | $ 1.2972 | $ 272.41 |
| 510+ | $ 1.2548 | $ 639.95 |
| 990+ | $ 1.232 | $ 1219.68 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-3P | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V | |
| Current - Continuous Drain(Id) | 70A | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 52mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-3P | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 300V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 52mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Proprietary novel planar technology
- R DS(ON) = 45 mΩ (typical) at V GS = 10 V
- Low gate charge for minimized switching losses
- Robust polysilicon gate structure
Applications
AI Translation
- Brushless DC motor driver
- Arc welding machine
- High-efficiency switch-mode power supply
C20623379 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

