ST M24C08-DRDW8TP/K

The M24C08-DRE is a 8-Kbit serial EEPROM device operating up to 105 ℃. The M24C08-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2. The device is accessed by a simple serial |²C compatible interface running up to 1M Hz. The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C08-DRE is a byte-alterable memory (1024 x 8 bits) organized as 64 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic. The M24C08-DRE offers an additional Identification Page (16 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

• Compatible with all |²C bus modes – 1 MHz – 400 kHz – 100 kHz
• Memory array – 8 Kbits (1024 bytes) of EEPROM – Page size: 16 bytes – Additional Write lockable page (Identification page)
• Extended temperature and voltage range – -40 ℃ to 105 ℃ ; 1.7 V to 5.5 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time – Byte Write within 4 ms – Page Write within 4 ms
• Write cycle endurance – 4 million Write cycles at 25 ℃, 1.2 million Write cycles at 85 ℃, 900 k Write cycles at 105 ℃
• Data retention – more than 50 years at 105 ℃ – 200 years at 55 ℃
• ESD Protection (Human Body Model) – 4000 V
• Packages – RoHS compliant and halogen-free