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UMW IRLL014NTR(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
IRLL014NTR(UMW)
LCSC Part #
C20617896
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 55V 2.8A SOT-223
Datasheetpdf iconUMW IRLL014NTR(UMW)
In-Stock: 3,375
3,375 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.131$ 0.66
50+$ 0.1033$ 5.17
150+$ 0.0894$ 13.41
500+$ 0.079$ 39.50
2,500+$ 0.0707$ 176.75
5,000+$ 0.0665$ 332.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingSOT-223
Drain to Source Voltage55V
Output Capacitance(Coss)66pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.1W
RDS(on)140mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)230pF
Gate Charge(Qg)9.5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The SOT-223 package is designed for SMT applications and is compatible with vapor phase, infrared, or wave soldering techniques. Its unique package design facilitates automated pick-and-place operations and offers improved thermal dissipation through an enlarged heatsink pad. A power dissipation of 1.0W is achievable in typical SMT applications.

Features

AI Translation
  • Drain-Source Voltage V_DS(V) = 55V
  • Drain Current I_D = 2A
  • On-Resistance R_DS(ON) < 140mΩ (Gate-Source Voltage V_GS = 10V)
  • Surface mount
  • Advanced process technology
  • Ultra-low on-resistance
  • Dynamic dv/dt rated
  • Fast switching