UMW IRF7241TR(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | IRF7241TR(UMW) |
| LCSC Part # | C20617891 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 6.2A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.22nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-Source Voltage V_DS(V) = -40V
- Drain Current I_D = -6.2A
- On-Resistance R_DS(ON) < 41mΩ (Gate-Source Voltage V_GS = -10V)
- On-Resistance R_DS(ON) < 70mΩ (Gate-Source Voltage V_GS = -4.5V)
- Trench Technology
- Ultra-Low On-Resistance
- P-Channel MOSFET
- Lead-Free
In-Stock: 895
895 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1394 | $ 0.70 |
| 50+ | $ 0.1099 | $ 5.50 |
| 150+ | $ 0.0951 | $ 14.27 |
| 500+ | $ 0.0841 | $ 42.05 |
| 3,000+ | $ 0.0752 | $ 225.60 |
| 6,000+ | $ 0.0708 | $ 424.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.22nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-Source Voltage V_DS(V) = -40V
- Drain Current I_D = -6.2A
- On-Resistance R_DS(ON) < 41mΩ (Gate-Source Voltage V_GS = -10V)
- On-Resistance R_DS(ON) < 70mΩ (Gate-Source Voltage V_GS = -4.5V)
- Trench Technology
- Ultra-Low On-Resistance
- P-Channel MOSFET
- Lead-Free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
