KUU AO3416
| Manufacturer | KUUAsian Brands |
| MPN | AO3416 |
| LCSC Part # | C20616231 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 6.5A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 30mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The A03416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
Features
AI Translation
- TrenchFET Power MOSFET
- ESD Rating: 2000V HBM
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- N-channel MOSFET
In-Stock: 2,530
2,530 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.05 | $ 0.50 |
| 100+ | $ 0.0399 | $ 3.99 |
| 300+ | $ 0.0348 | $ 10.44 |
| 3,000+ | $ 0.0294 | $ 88.20 |
| 6,000+ | $ 0.0264 | $ 158.40 |
| 9,000+ | $ 0.0249 | $ 224.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 30mΩ@1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The A03416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
Features
AI Translation
- TrenchFET Power MOSFET
- ESD Rating: 2000V HBM
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



