ROHM BR25G640FJ-3GE2
| Hersteller | |
| Herst.-Teilenr. | BR25G640FJ-3GE2 |
| LCSC-Nr. | C2061404 |
| Verp. | SOIC-8 |
| Kundennummer | |
| Hauptmerkm. | 64Kbit SPI Interface EEPROM |
| Datenblatt | ROHM BR25G640FJ-3GE2 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | ROHM | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 64Kbit | |
| Voltage - Supply | 1.6V~5.5V;2mA | |
| Clock Frequency | 20MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 0.1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | ROHM | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 64Kbit | |
| Voltage - Supply | 1.6V~5.5V;2mA |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 20MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 0.1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
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Beschreibung
KI-Übersetzung
640-3 is a 64Kbit Serial EEPROM of SPI BUS Inte
Merkmale
KI-Übersetzung
- High Speed Clock Action up to 20MHz (Max)
- Wait Function by HOLDB Terminal
- Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
- 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
- Up to 32 Bytes in Page Write Mode.
- For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)
- Self-timed Programming Cycle
- Low Current Consumption
- At Write Action (5V) : 0.5mA (Typ)
- At Read Action (5V) : 2.0mA (Typ)
- At Standby Action (5V) : 0.1μA (Typ)
- Address Auto Increment Function at Read Action Prevention of Write Mistake
- Write Prohibition at Power On
- Write Prohibition by Command Code (WRDI)
- Write Prohibition by WPB Pin
- Write Prohibition Block Setting by Status Registers (BP1, BP0)
- Prevention of Write Mistake at Low Voltage
- More than 100 years Data Retention.
- More than 1 Million Write Cycles.
- Bit Format 8Kx8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0
Vorrätig: 100
100 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7878 | $ 0.79 |
| 10+ | $ 0.7703 | $ 7.70 |
| 30+ | $ 0.7575 | $ 22.73 |
| 100+ | $ 0.7463 | $ 74.63 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | ROHM | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 64Kbit | |
| Voltage - Supply | 1.6V~5.5V;2mA | |
| Clock Frequency | 20MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 0.1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | ROHM | |
| Verp. | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Noise suppression function | |
| Memory Size | 64Kbit | |
| Voltage - Supply | 1.6V~5.5V;2mA |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 20MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 0.1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
640-3 is a 64Kbit Serial EEPROM of SPI BUS Inte
Merkmale
KI-Übersetzung
- High Speed Clock Action up to 20MHz (Max)
- Wait Function by HOLDB Terminal
- Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
- 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
- Up to 32 Bytes in Page Write Mode.
- For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)
- Self-timed Programming Cycle
- Low Current Consumption
- At Write Action (5V) : 0.5mA (Typ)
- At Read Action (5V) : 2.0mA (Typ)
- At Standby Action (5V) : 0.1μA (Typ)
- Address Auto Increment Function at Read Action Prevention of Write Mistake
- Write Prohibition at Power On
- Write Prohibition by Command Code (WRDI)
- Write Prohibition by WPB Pin
- Write Prohibition Block Setting by Status Registers (BP1, BP0)
- Prevention of Write Mistake at Low Voltage
- More than 100 years Data Retention.
- More than 1 Million Write Cycles.
- Bit Format 8Kx8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0
C2061404 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
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