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HXY MOSFET MJD122-HXY product image
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HXY MOSFET MJD122-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
MJD122-HXY
LCSC Part #
C20611969
Packaging
TO-252-2L
Customer #
Key Attributes
TRANS NPN 100V 8A TO-252-2L
Datasheetpdf iconHXY MOSFET MJD122-HXY
In-Stock: 1,715
1,715 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2244$ 1.12
50+$ 0.1778$ 8.89
150+$ 0.1578$ 23.67
500+$ 0.1328$ 66.40
2,500+$ 0.1217$ 304.25
5,000+$ 0.1151$ 575.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerHXY MOSFET
PackagingTO-252-2L
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Vbe On(VBE(on))-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000~12000;100
Pd - Power Dissipation1.5W
type-
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))2V;4V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • High DC current gain
  • Electrical characteristics similar to the commonly used TIP122
  • Built-in damper diode between collector and emitter