MICROCHIP 11LC010T-I/MNY
| Manufacturer | |
| MPN | 11LC010T-I/MNY |
| LCSC Part # | C2061193 |
| Packaging | TDFN-8-EP(2x3) |
| Customer # | |
| Key Attributes | 1Kbit to 16Kbit Serial EEPROM |
| Datasheet | MICROCHIP 11LC010T-I/MNY |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in write enable latch (WEL);Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 1Kbit | |
| Voltage - Supply | 2.5V~5.5V;1mA | |
| Clock Frequency | 100kHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | Single bus |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in write enable latch (WEL);Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 1Kbit | |
| Voltage - Supply | 2.5V~5.5V;1mA |
| Type | Description | |
|---|---|---|
| Clock Frequency | 100kHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | Single bus |
Introduction
The 1 Kbit through 16 Kbit Serial Electrically Erasable PROMs are organized in blocks of 8-bit memory and support the patented single 1/0 UNI/O serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SClO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V (for 11AAxXX devices), with standby and active currents of only 1 uA and 1 mA, respectively. The 11xX family is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 3-lead SOT-23, 3-lead TO-92, 4-lead Chip Scale, 8-lead TDFN, and 8-lead MSOP.
Features
- Single 1/O, UNI I/O Serial Interface Bus
- Low-Power CMOS Technology: - 1 mA active current, typical 1 μA standby current (max.) (l-temp) 128x8 through 2,048x8 Bit Organizations
- Schmitt Trigger Inputs for Noise Suppression
- Output Slope Control to Eliminate Ground Bounce
- 100 kbps Max. Bit Rate - Equivalent to 100 kHz Clock Frequency
- Self-Timed Write Cycle (including Auto-Erase)
- Page-Write Buffer for up to 16 Bytes
- STATUS Register for Added Control: - Write enable latch bit - Write-In-Progress bit
- Block Write Protection: - Protect none, 1/4, 1/2 or all of array
- Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch
- High Reliability: - Endurance: 1,000,000 erase/write cycles - Data retention: >200 years - ESD protection: >4,000 V
- 3-lead SOT-23 and TO-92 Packages
- 4-lead Chip Scale Package
- 8-lead PDIP, SOIC, MSOP, TDFN Packages
- Pb-Free and RoHS Compliant
- Available Temperature Ranges: - Industrial (l): -40℃ to +85℃ - Automotive (E): -40℃ to +125℃
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.278 | $ 0.28 |
| 200+ | $ 0.1076 | $ 21.52 |
| 500+ | $ 0.1038 | $ 51.90 |
| 1,000+ | $ 0.102 | $ 102.00 |
Standard Packaging3300/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in write enable latch (WEL);Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 1Kbit | |
| Voltage - Supply | 2.5V~5.5V;1mA | |
| Clock Frequency | 100kHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | Single bus |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in write enable latch (WEL);Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 1Kbit | |
| Voltage - Supply | 2.5V~5.5V;1mA |
| Type | Description | |
|---|---|---|
| Clock Frequency | 100kHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | Single bus |
Introduction
The 1 Kbit through 16 Kbit Serial Electrically Erasable PROMs are organized in blocks of 8-bit memory and support the patented single 1/0 UNI/O serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SClO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V (for 11AAxXX devices), with standby and active currents of only 1 uA and 1 mA, respectively. The 11xX family is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 3-lead SOT-23, 3-lead TO-92, 4-lead Chip Scale, 8-lead TDFN, and 8-lead MSOP.
Features
- Single 1/O, UNI I/O Serial Interface Bus
- Low-Power CMOS Technology: - 1 mA active current, typical 1 μA standby current (max.) (l-temp) 128x8 through 2,048x8 Bit Organizations
- Schmitt Trigger Inputs for Noise Suppression
- Output Slope Control to Eliminate Ground Bounce
- 100 kbps Max. Bit Rate - Equivalent to 100 kHz Clock Frequency
- Self-Timed Write Cycle (including Auto-Erase)
- Page-Write Buffer for up to 16 Bytes
- STATUS Register for Added Control: - Write enable latch bit - Write-In-Progress bit
- Block Write Protection: - Protect none, 1/4, 1/2 or all of array
- Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch
- High Reliability: - Endurance: 1,000,000 erase/write cycles - Data retention: >200 years - ESD protection: >4,000 V
- 3-lead SOT-23 and TO-92 Packages
- 4-lead Chip Scale Package
- 8-lead PDIP, SOIC, MSOP, TDFN Packages
- Pb-Free and RoHS Compliant
- Available Temperature Ranges: - Industrial (l): -40℃ to +85℃ - Automotive (E): -40℃ to +125℃
C2061193 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 11AA010T-I/MNY | MICROCHIP | Similar | TDFN-8-EP(2x3) | 0 | $ 0.5859 | ||
| 11LC010T-E/MNY | MICROCHIP | Similar | TDFN-8-EP(2x3) | 0 | $ 0.4034 |

