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micron MT29F256G08AUCABH3-10ITZ:A product image
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micron MT29F256G08AUCABH3-10ITZ:ARoHS

Manufacturer
micron
MPN
MT29F256G08AUCABH3-10ITZ:A
LCSC Part #
C20579351
Packaging
LBGA-100(12x18)
Customer #
Key Attributes
256Gbit 2.7V~3.6V 100MHz Parallel LBGA-100(12x18) Memory (ICs) RoHS
Datasheetpdf iconmicron MT29F256G08AUCABH3-10ITZ:A
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QtyUnit Price(Reference Only)Total Amount
1+$ 229.6409$ 229.64
200+$ 215.6787$ 43135.74
500+$ 208.4715$ 104235.75
1,120+$ 204.9108$ 229500.10
Standard Packaging1120/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturermicron
PackagingLBGA-100(12x18)
Memory Size256Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles60,000 Cycles
Clock Frequency100MHz
FeaturesRead buffer function;Copy back write function;Hardware reset function;Software reset function;Hardware write protection function;OTP region write protection and lock function
Data Retention - TDR (Year)-
Block Erase Time(tBE)1.5ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)350us
Standby Supply Current-
InterfaceParallel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1120
Sales UnitPiece

Features

AI Translation
  • Open NAND Flash Interface (ONFI) 2.2-compliant
  • Single-level cell (SLC) technology
  • Organization:
    • Page size x8: 8640 bytes (8192 + 448 bytes)
    • Block size: 128 pages (1024K + 56K bytes)
    • Plane size: 2 planes x 2048 blocks per plane
    • Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks
  • Synchronous I/O performance:
    • Up to synchronous timing mode 5
    • Clock rate: 10ns (DDR)
    • Read/write throughput per pin: 200 MT/s
  • Asynchronous I/O performance:
    • Up to asynchronous timing mode 5
    • tRC/tWC: 20ns (MIN)
    • Read/write throughput per pin: 50 MT/s
  • Array performance:
    • Read page: 35µs (MAX)
    • Program page: 350µs (TYP)
    • Erase block: 1.5ms (TYP)
  • Operating Voltage Range:
    • VCC: 2.7–3.6V
    • VCCQ: 1.7–1.95V, 2.7–3.6V
  • Command set: ONFI NAND Flash Protocol
  • Advanced Command Set:
    • Program cache
    • Read cache sequential
    • Read cache random
    • One-time programmable (OTP) mode
    • Multi-plane commands
    • Multi-LUN operations
    • Read unique ID
    • Copyback
  • First block (block address 00h) is valid when shipped from factory.
  • RESET (FFh) required as first command after power-on
  • Operation status byte provides software method for detecting operation completion:
    • Pass/fail condition
    • Write-protect status
  • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface
  • Copyback operations supported within the plane from which data is read
  • Quality and reliability:
    • Data retention: JESD47G compliant; see qualification report
    • Endurance: 60,000 PROGRAM/ERASE cycles
  • Operating temperature:
    • Commercial: 0℃ to +70℃
    • Industrial (IT): -40℃ to +85℃
  • Package:
    • 52-pad LGA
    • 48-pin TSOP
    • 100-ball BGA
    • 132-ball BGA