Abbildung ähnlich
EDA-ModelleEasyEDA
micron MT41J256M16HA-125:E TR
| Hersteller | |
| Herst.-Teilenr. | MT41J256M16HA-125:E TR |
| LCSC-Nr. | C20463225 |
| Verp. | 96-FBGA (9x14) |
| Kundennummer | |
| Hauptmerkm. | 4Gbit 800MHz DDR3 SDRAM 96-FBGA (9x14) Memory RoHS |
| Datenblatt | micron MT41J256M16HA-125:E TR |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | 96-FBGA (9x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Dynamic on-chip termination;Write leveling function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.425V~1.575V;- | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3 SDRAM |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | 96-FBGA (9x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Dynamic on-chip termination;Write leveling function |
| Typ | Beschreibung | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.425V~1.575V;- | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3 SDRAM |
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Merkmale
KI-Übersetzung
- VDD = VDDQ = 1.5V ± 0.075V
- 1.5V center-tapped push-pull I/O
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS read latency (CL)
- Posted CAS additive latency (AL)
- tCK-based programmable CAS write latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via mode register set [MRS])
- Dynamically selectable BC4 or BL8
- Self-refresh mode
- TC range: 0°C to 95°C
- 8192 refreshes within 64ms at 0°C to 85°C
- 8192 refreshes within 32ms at 85°C to 95°C
- Self-refresh temperature (SRT)
- Write leveling
- Multi-purpose register
- Output driver calibration
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 12.5836 | $ 12.58 |
| 200+ | $ 5.0213 | $ 1004.26 |
| 500+ | $ 4.8527 | $ 2426.35 |
| 1,000+ | $ 4.7707 | $ 4770.70 |
Standardgehäuse1000/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | 96-FBGA (9x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Dynamic on-chip termination;Write leveling function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.425V~1.575V;- | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3 SDRAM |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | 96-FBGA (9x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Dynamic on-chip termination;Write leveling function |
| Typ | Beschreibung | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.425V~1.575V;- | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3 SDRAM |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- VDD = VDDQ = 1.5V ± 0.075V
- 1.5V center-tapped push-pull I/O
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS read latency (CL)
- Posted CAS additive latency (AL)
- tCK-based programmable CAS write latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via mode register set [MRS])
- Dynamically selectable BC4 or BL8
- Self-refresh mode
- TC range: 0°C to 95°C
- 8192 refreshes within 64ms at 0°C to 85°C
- 8192 refreshes within 32ms at 85°C to 95°C
- Self-refresh temperature (SRT)
- Write leveling
- Multi-purpose register
- Output driver calibration
C20463225 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| MT41J256M16HA-125:E | micron | Ähnliche | 96-FBGA (9x14) | 0 | $ 43.7006 | ||
| MT41J256M16HA-107:E | micron | Ähnliche | 96-FBGA (9x14) | 0 | $ 15.7124 | ||
| MT41J256M16HA-107:E TR | micron | Ähnliche | 96-FBGA (9x14) | 0 | $ 12.5836 | ||
| MT41J256M16HA-093G:E TR | micron | Ähnliche | 96-FBGA (9x14) | 0 | $ 12.5836 | ||
| MT41J256M16HA-093G:E | micron | Ähnliche | 96-FBGA (9x14) | 0 | $ 15.7124 |