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Modelli EDAEasyEDA
micron MT53E1G32D2FW-046 IT:B
| Produttore | |
| Cod. Prod. | MT53E1G32D2FW-046 IT:B |
| Cod. LCSC | C20451987 |
| Imballo | 200-TFBGA(10x14.5) |
| Numero Cliente | |
| Attr. chiave | 32Gbit 2.133GHz LPDDR4X SDRAM 200-TFBGA(10x14.5) Memory |
| Scheda Tecnica | micron MT53E1G32D2FW-046 IT:B |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 32Gbit | |
| Voltage - Supply | 1.06V~1.17V;- | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 32Gbit | |
| Voltage - Supply | 1.06V~1.17V;- | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
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Caratteristiche
Traduzione AI
- Ultra-low-voltage core and I/O power supplies - VDD1 = 1.70 - 1.95V; 1.80V nominal - VDD2 = 1.06 - 1.17V; 1.10V nominal - VDDO = 0.57 - 0.65V; 0.60V nominal or VDDQ = 1.06–1.17V; 1.10V nominal
- Frequency range – 2133–10 MHz (data rate range per pin: 4266–20 Mb/s)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.5 GB/s per die x16 channel
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
- Single-ended CK and DQS support
Disponibile: 4
4 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 220.2109 | $ 220.21 |
| 30+ | $ 209.2975 | $ 6278.93 |
Package Standard2000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 32Gbit | |
| Voltage - Supply | 1.06V~1.17V;- | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | micron | |
| Imballo | 200-TFBGA(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function |
| Tipo | Descrizione | |
|---|---|---|
| Refresh Current | - | |
| Memory Size | 32Gbit | |
| Voltage - Supply | 1.06V~1.17V;- | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4X SDRAM |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Ultra-low-voltage core and I/O power supplies - VDD1 = 1.70 - 1.95V; 1.80V nominal - VDD2 = 1.06 - 1.17V; 1.10V nominal - VDDO = 0.57 - 0.65V; 0.60V nominal or VDDQ = 1.06–1.17V; 1.10V nominal
- Frequency range – 2133–10 MHz (data rate range per pin: 4266–20 Mb/s)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.5 GB/s per die x16 channel
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
- Single-ended CK and DQS support
C20451987 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MT53E1G32D2FW-046 IT:A | micron | 200-TFBGA (10x14.5) | 88 | $ 83.9479 | ||
| MT53E1G32D2FW-046 AIT:C | micron | TFBGA-200(10x14.5) | 0 | $ 20.2086 | ||
| MT53E1G32D2FW-046 AIT:C TR | micron | TFBGA-200(10x14.5) | 0 | $ 79.1176 | ||
| MT53E1G32D2FW-046 IT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 61.9928 | ||
| MT53E1G32D2FW-046 AIT:A | micron | 200-TFBGA (10x14.5) | 0 | $ 72.9527 | ||
| MT53E1G32D2FW-046 AIT:B | micron | 200-TFBGA(10x14.5) | 0 | $ 56.2299 | ||
| MT53E1G32D2FW-046 AIT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 71.2631 | ||
| MT53E1G32D2FW-046 AIT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 61.5554 | ||
| MT53E1G32D2FW-046 IT:B TR | micron | TFBGA-200(10x14.5) | 0 | $ 30.2258 | ||
| MT53E1G32D2FW-046 AAT:C | micron | TFBGA-200(10x14.5) | 0 | $ 87.3026 | ||
| MT53E1G32D2FW-046 AAT:C TR | micron | TFBGA-200(10x14.5) | 0 | $ 87.3026 | ||
| MT53E1G32D2FW-046 AAT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 75.0076 | ||
| MT53E1G32D2FW-046 AAT:A | micron | 200-TFBGA (10x14.5) | 0 | $ 75.0076 | ||
| MT53E1G32D2FW-046 AAT:B | micron | TFBGA-200(10x14.5) | 0 | $ 25.8986 | ||
| MT53E1G32D2FW-046 AUT:C | micron | TFBGA-200(10x14.5) | 0 | $ 100.3524 | ||
| MT53E1G32D2FW-046 AUT:C TR | micron | TFBGA-200(10x14.5) | 0 | $ 100.3524 | ||
| MT53E1G32D2FW-046 AUT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 92.3026 | ||
| MT53E1G32D2FW-046 AUT:B TR | micron | 200-TFBGA (10x14.5) | 0 | $ 95.2142 | ||
| MT53E1G32D2FW-046 WT:A TR | micron | 200-TFBGA (10x14.5) | 0 | $ 52.5081 | ||
| MT53E1G32D2FW-046 WT:A | micron | TFBGA-200(10x14.5) | 0 | $ 14.0955 |